Title of article :
Microstructure and strain distribution in freestanding Si membrane strained by SixNy deposition
Author/Authors :
Gao، نويسنده , , Hongye and Ikeda، نويسنده , , Ken-ichi and Hata، نويسنده , , Satoshi and Nakashima، نويسنده , , Hideharu and Wang، نويسنده , , Dong and Nakashima، نويسنده , , Hiroshi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Abstract :
Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergent-beam electron diffraction (CBED). CBED results show that the strain magnitude depends negatively on the FSSM thickness. FEM is a supplement of the result of CBED due to the relaxation of TEM samples during fabricating. The FEM analysis results ascertain the strain property in three dimensions, and show that the strain magnitude depends negatively on the length of FSSM, and the magnitude of the compressive strain in FSSM increases as the position is closer to the upper Si/SixNy interface.
Keywords :
FSSM , strain , FEM , CBED
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Journal title :
MATERIALS SCIENCE & ENGINEERING: A