Title of article :
Crack-healing behavior of Si3N4/SiC composite under stress and low oxygen pressure
Author/Authors :
Takahashi، نويسنده , , Koji and Jung، نويسنده , , Young-Soon and Nagoshi، نويسنده , , Yasuto and Ando، نويسنده , , Kotoji، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2010
Pages :
6
From page :
3343
To page :
3348
Abstract :
The crack-healing behavior of Si3N4/SiC composite under constant stress and low oxygen partial pressure was investigated. A semi-elliptical surface crack with a length of about 100 μm was introduced at the center of the tensile surface by the indentation method. The specimens were crack-healed at 1200 °C for 5 h under tensile stress (σapp. = 200–300 MPa) and under low oxygen partial pressure and air ( P O 2 = 50 – 21   000   Pa ). The threshold constant stress for crack-healing was defined as 200 MPa in oxygen partial pressure over 500 Pa. The bending strengths of crack-healed specimens under tensile stress in P O 2 ≥ 500   Pa showed almost the same value as a healed smooth specimen, and most specimens fractured outside the crack-healed zone. From these results, we conclude that crack-healing can be achieved under stress in low oxygen pressure and can lengthen lifetime and increase reliability in Si3N4/SiC composite ceramic.
Keywords :
Si3N4/SiC , Crack-healing , low oxygen partial pressure , in situ observation
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Serial Year :
2010
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Record number :
2166212
Link To Document :
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