• Title of article

    Crack-healing behavior of Si3N4/SiC composite under stress and low oxygen pressure

  • Author/Authors

    Takahashi، نويسنده , , Koji and Jung، نويسنده , , Young-Soon and Nagoshi، نويسنده , , Yasuto and Ando، نويسنده , , Kotoji، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2010
  • Pages
    6
  • From page
    3343
  • To page
    3348
  • Abstract
    The crack-healing behavior of Si3N4/SiC composite under constant stress and low oxygen partial pressure was investigated. A semi-elliptical surface crack with a length of about 100 μm was introduced at the center of the tensile surface by the indentation method. The specimens were crack-healed at 1200 °C for 5 h under tensile stress (σapp. = 200–300 MPa) and under low oxygen partial pressure and air ( P O 2 = 50 – 21   000   Pa ). The threshold constant stress for crack-healing was defined as 200 MPa in oxygen partial pressure over 500 Pa. The bending strengths of crack-healed specimens under tensile stress in P O 2 ≥ 500   Pa showed almost the same value as a healed smooth specimen, and most specimens fractured outside the crack-healed zone. From these results, we conclude that crack-healing can be achieved under stress in low oxygen pressure and can lengthen lifetime and increase reliability in Si3N4/SiC composite ceramic.
  • Keywords
    Si3N4/SiC , Crack-healing , low oxygen partial pressure , in situ observation
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    2010
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2166212