Title of article :
Yttrium hole-barrier contacts for germanium semiconductor detectors
Author/Authors :
Hull، نويسنده , , Ethan L. and Pehl، نويسنده , , Richard H. and Lathrop، نويسنده , , James R. and Suttle، نويسنده , , Bruce E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
Sputtered yttrium metal forms a thin hole-barrier contact on both p- and n-type germanium semiconductor detectors. Yttrium contacts can provide a sufficiently high hole barrier to prevent measurable contact leakage current below ∼120 K. Detectors having yttrium contacts produce good gamma-ray spectroscopy data.
Keywords :
Germanium detector , HPGe , Segmented contacts , Gamma-ray detector , Charged-particle detector , Yttrium
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
