Title of article
Yttrium hole-barrier contacts for germanium semiconductor detectors
Author/Authors
Hull، نويسنده , , Ethan L. and Pehl، نويسنده , , Richard H. and Lathrop، نويسنده , , James R. and Suttle، نويسنده , , Bruce E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
39
To page
42
Abstract
Sputtered yttrium metal forms a thin hole-barrier contact on both p- and n-type germanium semiconductor detectors. Yttrium contacts can provide a sufficiently high hole barrier to prevent measurable contact leakage current below ∼120 K. Detectors having yttrium contacts produce good gamma-ray spectroscopy data.
Keywords
Germanium detector , HPGe , Segmented contacts , Gamma-ray detector , Charged-particle detector , Yttrium
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2011
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2171161
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