Title of article :
Characterization of photolithographically defined NIS tunnel junctions as X-ray sensors
Author/Authors :
Chow، نويسنده , , D. and Neuhauser، نويسنده , , B. and Frank، نويسنده , , Stephen M. and Mears، نويسنده , , C.A. and Abusaidi، نويسنده , , R. and Cunningham، نويسنده , , M. and Golzarian، نويسنده , , R.M. and Hake، نويسنده , , D.D. and Labov، نويسنده , , S.E. and Lindeman، نويسنده , , M.A. and Owens، نويسنده , , W.E. and Sadoulet، نويسنده , , B. and Slepoy، نويسنده , , A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
4
From page :
57
To page :
60
Abstract :
We are developing normal-insulator-superconductor (NIS) tunnel junctions for use as X-ray detectors for astronomical purposes and as phonon sensors for dark matter detectors. We are using photolithographic techniques to produce structures in which aluminum is the superconductor, Al2O3 is the tunnel barrier, and copper is the normal metal. We describe microfabrication details and present X-ray pulse data.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1996
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2171611
Link To Document :
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