Author/Authors :
Luiten، نويسنده , , O.J and van Lieshout، نويسنده , , H.L and Michels، نويسنده , , F.A and Valko، نويسنده , , P and Bruijn، نويسنده , , M.P and Kiewiet، نويسنده , , F and de Korte، نويسنده , , P.A.J and Adelerhof، نويسنده , , D.J and Hamster، نويسنده , , A.W and Brons، نويسنده , , C.G.S and Flokstra، نويسنده , , J، نويسنده ,
Abstract :
The quasiparticle lifetimes and tunneltimes in SIS tunnel junctions are essential parameters in the development of these devices for high resolution X-ray spectroscopy. We present a simple analytical model which allows us to calculate both the risetime and the total charge of the integrated tunnel current following an X-ray event. Simultaneous measurement of both the total charge and the risetime thus becomes a useful diagnostic tool for quantitative analysis. We have applied the model to recent X-ray measurements on a NbAlOx SIS junction. We find that the energy resolution achieved in this device is mainly limited by variations in the thickness of the counter electrode.
