Title of article :
Effects of deep level defects in semiconductor detectors
Author/Authors :
Lutz، نويسنده , , G.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
10
From page :
234
To page :
243
Abstract :
Initiated by the application of semiconductors in the very high radiation environment of future high energy accelerators a formalism has been developed which, based on first principles, allows a quantitative prediction of macroscopic detector behaviour from microscopic defect properties and concentrations. It can be applied also for a systematic study of defect properties by means of measurements of macroscopic material properties. The relation between macroscopic and microscopic properties is developed successively for thermal equilibrium conditions, the fully depleted space charge region, the stationary situation and the general time dependent case. A one dimensional numerical simulation program provides several illustrative results.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1996
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2173177
Link To Document :
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