Title of article :
Damage-induced surface effects in silicon detectors
Author/Authors :
Wunstorf، نويسنده , , R. and Feick، نويسنده , , H. and Fretwurst، نويسنده , , E. and Lindstrِm، نويسنده , , G. and Lutz، نويسنده , , G. and Osius، نويسنده , , C. and Richter، نويسنده , , R.H. and Rohe، نويسنده , , T. and Rolf، نويسنده , , A. and Schlichthنrle، نويسنده , , P.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
8
From page :
290
To page :
297
Abstract :
One of the main applications of silicon detectors in future collider experiments is their use in the tracking area. In addition to the very intense hadron flux (both neutral and charged) causing bulk damage, a severe effect by ionizing radiation has also to be envisioned at small radii. In the present study results obtained after irradiation with low energetic electrons (20 keV) are presented. In this case bulk damage can be completely excluded. Effects on the oxide charge and density of interface states are characterized by C—V and I—V measurements. In addition the corresponding changes of the space charge region are observed with a scanning proton micro beam. The electric field distribution, the depletion depth and the lateral extension of the depletion region is thus investigated and the results are compared with detailed simulations using the ToSCA-program.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1996
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2173188
Link To Document :
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