The application of high energy ion implantation for silicon radiation detectors

High energy ion implantation of phosphorous and boron in the MeV-range has been applied to modify the vertical electric field distribution of silicon pn-junction radiation detectors. Low dose phosphorous implantation (10 MeV, 1011–1012 cm−2) was used to realize detectors with local high field regions characterized by an internal electric field strength up to 150 kV/cm. A field related decrease of the effective window down to 35 nm and a corresponding reduction of the pulse height defect (PHD) for the spectroscopy of low energy heavy ions have been obtained. Additional subjects for the application of the MeV-ion implantation technique are briefly summarized.