Sensitivity of photoconductive GaAs detectors to pulsed electrons

The response of neutron damaged GaAs photoconductor detectors to intense, fast (50 ps fwhm) pulses of 16 MeV electrons has been measured. Detectors made from neutron damaged GaAs are known to have reduced gain, but significantly improved bandwidth. An empirical relationship between the observed signal and the incident electron fluence has been determined.