Title of article :
Capacitance measurements of double-metal double-sided silicon microstrip detectors
Author/Authors :
Bortoletto، نويسنده , , D. and Garfinkel، نويسنده , , A.F. and Hardman، نويسنده , , A.D. and Hoffman، نويسنده , , K.D. and Keaffaber، نويسنده , , T.A. and Shaw، نويسنده , , N.M. and Stanley، نويسنده , , G.R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
6
From page :
104
To page :
109
Abstract :
Double-metal double-sided silicon microstrip prototype sensors have been developed by Sintef/SI, Micron Semiconductor, and Hamamatsu Photonics for the CDF silicon vertex detector upgrade, SVXII. The sensors are biased with polysilicon resistors and have integrated AC-coupling and p-stop isolation. We present measurements of the total capacitance, interstrip capacitance and overlap capacitance due to the double metal structure. The measurements are compared to a simple electrostatic model.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1996
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2174159
Link To Document :
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