Author/Authors :
Ohsugi، نويسنده , , T. and Iwata، نويسنده , , Y. and Ohyama، نويسنده , , H. and Ohmoto، نويسنده , , T. and Yoshikawa، نويسنده , , M. and Handa، نويسنده , , T. and Kurino، نويسنده , , K. and Fujita، نويسنده , , K. and Kitabayashi، نويسنده , , H. and Tamura، نويسنده , , N. and Hatakenaka، نويسنده , , T. and Maeohmichi، نويسنده , , M. and Takahata، نويسنده , , M. and Nakao، نويسنده , , M. and Iwasaki، نويسنده , , H. and Kohriki، نويسنده , , T. an، نويسنده ,
Abstract :
We have examined experimentally some existing ideas for improving the radiation hardness of silicon microstrip sensors. We confirm that the extended electrode and the deep implant-strip proposed on the basis of simulation studies works effectively to suppress micro-discharge as well as junction breakdown of the bias or guard ring. For an integrated coupling capacitor a double layer structure of SiO2 and Si3N4 provides better radiation hardness than that of single SiO2 coupling in our design conditions. The onset voltage of the micro-discharge on the bias/guard ring has been studied for an extended electrode and a floating guard ring.
