Development of a radiation hardness testing facility for semiconductor devices at a medical cyclotron

A radiation hardness testing facility for semiconductor devices has been developed by harnessing the high energy parasitic neutrons generated during routine isotope production operation at a medical cyclotron facility. A maximum neutron flux of 1.2 × 1010 neutrons cm−2 s−1 with an average energy of 3.21 MeV and a spectral index (SI) of 1.52 was achieved.