Experimental results on radiation induced bulk damage effects in float-zone and epitaxial silicon detectors

A comparative study of the radiation hardness of silicon pad detectors, manufactured from float-zone and epitaxial n-type monocrystals and irradiated with protons and neutrons up to a fluence of 3.5 × 1014 cm−2 is presented. The results are compared in terms of their reverse current, depletion voltage, and charge collection as a function of fluence during irradiation and as a function of time after irradiation.