• Title of article

    Simulation and first beam test of a single-sided two-dimensional detector using pMOS pixels

  • Author/Authors

    Avrillon، نويسنده , , Sylvie and Perret-Gallix، نويسنده , , Denis and Ikeda، نويسنده , , Hirokazu and Matsuda، نويسنده , , Takeshi and Asano، نويسنده , , Yuzo and Tsuchiya، نويسنده , , Shinichi and Saitoh، نويسنده , , Yutaka and Inoue، نويسنده , , Masahiro and Yamanaka، نويسنده , , Junko، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1997
  • Pages
    5
  • From page
    172
  • To page
    176
  • Abstract
    A strip-like two-dimensional readout single-sided detector using pMOS pixels is being developed at KEK, as part of the R&D for the BELLE experiment. It may be used in upgrades of the vertex detector. The pMOS pixel is composed of a double drain pMOS transistor, providing direct amplification on site, implanted in the n-well collecting electrode of the detecting silicon pin diode. We first briefly review the concept and principle of the pMOS pixel detector, before presenting simulation and test performed on the prototypes with a beam of minimum ionizing particles.
  • Keywords
    Silicon detector , pixel , pMOS transistor , Energy deposition
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    1997
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2174881