Title of article
Simulation and first beam test of a single-sided two-dimensional detector using pMOS pixels
Author/Authors
Avrillon، نويسنده , , Sylvie and Perret-Gallix، نويسنده , , Denis and Ikeda، نويسنده , , Hirokazu and Matsuda، نويسنده , , Takeshi and Asano، نويسنده , , Yuzo and Tsuchiya، نويسنده , , Shinichi and Saitoh، نويسنده , , Yutaka and Inoue، نويسنده , , Masahiro and Yamanaka، نويسنده , , Junko، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
172
To page
176
Abstract
A strip-like two-dimensional readout single-sided detector using pMOS pixels is being developed at KEK, as part of the R&D for the BELLE experiment. It may be used in upgrades of the vertex detector. The pMOS pixel is composed of a double drain pMOS transistor, providing direct amplification on site, implanted in the n-well collecting electrode of the detecting silicon pin diode. We first briefly review the concept and principle of the pMOS pixel detector, before presenting simulation and test performed on the prototypes with a beam of minimum ionizing particles.
Keywords
Silicon detector , pixel , pMOS transistor , Energy deposition
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1997
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2174881
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