Author/Authors :
Eremin، نويسنده , , V and Verbitskaya، نويسنده , , E and Li، نويسنده , , Z and Sidorov، نويسنده , , A and Fretwurst، نويسنده , , E and Lindstrom، نويسنده , , G، نويسنده ,
Abstract :
Investigations of the I-V stabilization phenomenon in neutron-irradiated silicon detectors have been carried out using scanning transient current technique (STCT) on non-irradiated p+-p-n+ detectors. The p+-p-n+ structure was used to simulate the p+-n-n+ detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I-V stabilization have been identified.
