Title of article :
Measurements on GaAs strip and pixel detectors in a 50 GeV pion beam
Author/Authors :
Syben، نويسنده , , O and Arbabi، نويسنده , , S and Braunschweig، نويسنده , , W and Breibach، نويسنده , , J and Chu، نويسنده , , Z and Karpinski، نويسنده , , W and Krais، نويسنده , , R and Kubicki، نويسنده , , Th. and Lübelsmeyer، نويسنده , , K and Rente، نويسنده , , C and Siedling، نويسنده , , R and Tenbusch، نويسنده , , F and Toporowski، نويسنده , , M and Wittmer، نويسنده , , B and Xiao، نويسنده , , W.J، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
4
From page :
408
To page :
411
Abstract :
GaAs strip and pixel detectors constructed in Aachen have been tested at CERN in a 50 GeV pion beam in September 1995 in collaboration with the CMS Tracker group. The strip detectors had a pitch of 100 μm and were made of a 250 μm thick Freiberger SI-GaAs wafer [1]. The three strip detectors had a strip width of 25, 50 and 75 μm, respectively. Using the fast PreMux128 preamplifier multiplexer chip (τp = 50 ns) a signal to noise ratio of 15 was obtained for the widest strips at normal beam incidence for a bias voltage of 170V. The 8 × 8 pixel arrays with a pixel size of 1 × 1 mm2 and 0.5 × 0.5 mm2, respectively, were read out with the PreMux128 as well. Here a signal of 12500e− was obtained for both detectors, leading to a maximum signal to noise ratio of 20 at perpendicular beam incidence and 170 V bias voltage.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1997
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2175207
Link To Document :
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