Automatic generation of a MOS transistor simulation model with Maple V

Simulation models for semiconductor elements like MOS transistors are of great interest in the field of circuit simulation. Developing a new simulation model for a transistor is computing a set of equations governing the behaviour of the MOSFETs and the influence of the various model parameters. Due to the complexity of expressions and to the large number of the involved parameters, the hand calculations are almost impossible. We describe how we used Maple V to generate from scratch the MOS transistor model Level 3, its derivatives and the corresponding FORTRAN code.