Title of article :
Mobility of excess electrons in hexamethyldisiloxane and bis(trimethylsilyl)methane
Author/Authors :
Holroyd، نويسنده , , Richard A. and Itoh، نويسنده , , Kengo and Nishikawa، نويسنده , , Masaru، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
The mobility of excess electrons in bis(trimethylsilyl)methane is 63 cm2/V s, and in hexamethyldisiloxane 22 cm2/V s. For these and related silicon-containing compounds, the mobility is greater than for those alkanes which have comparable free-ion yields.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
