Title of article :
Growth of high purity GaAs using low-pressure vapour-phase epitaxy
Author/Authors :
Adams، نويسنده , , R.L.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
The growth of high purity films of gallium arsenide using growth rates of greater than 1 μm/minute has been demonstrated using Low-Pressure Vapour-Phase Epitaxy. These films have been found to be suitable for high energy particle detectors and high voltage Schottky diodes.
Keywords :
LPVPE , GaAS , Low-pressure vapour-phase epitaxy
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
