Systematic modelling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation

Systematic and integrated physical modelling has been carried out for capacitance and current-based microscopic defect analysis techniques including the C-DLTS (capacitance-deep level transient spectroscopy), I-DLTS (current-DLTS), and TSC (thermally stimulated current). The applicability of various techniques to the characterization of neutron-irradiated high-resistivity silicon detectors has been examined and compared. C-DLTS is valid only for detectors irradiated to neutron fluences less than a few times 1012 n/cm2, while there seems to be no limit for the applicability for I-DLTS or TSC. However, current-based techniques, unlike the C-DLTS, cannot distinguish minority carrier traps from majority ones. In addition, special care may have to be taken in determining the effective depletion depth for highly irradiated detectors.