Author/Authors :
Irsigler، نويسنده , , R and Geppert، نويسنده , , R and Gِppert، نويسنده , , R and Hornung، نويسنده , , M and Ludwig، نويسنده , , J and Rogalla، نويسنده , , M and Runge، نويسنده , , K and Schmid، نويسنده , , Th. and Sِldner-Rembold، نويسنده , , A and Webel، نويسنده , , M and Weber، نويسنده , , C، نويسنده ,
Abstract :
Full-size single-sided GaAs microstrip detectors with integrated coupling capacitors and bias resistors have been fabricated on 3″ substrate wafers. PECVD deposited SiO2 and SiO2Si3N4 layers were used to provide coupling capacitances of 32.5 and 61.6 pF/cm, respectively. The resistors are made of sputtered CERMET using simple lift of technique. The sheet resistivity of 78 kΩ/□ and the thermal coefficient of resistance of less than 4 × 10−3/°C satisfy the demands of small area biasing resistors, working on a wide temperature range.
