Title of article :
Theoretical current response of silicon detectors to fast neutron beams in mixed n, γ fields
Author/Authors :
Jung، نويسنده , , M and Teissier، نويسنده , , C and Siffert، نويسنده , , P، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
8
From page :
503
To page :
510
Abstract :
A theoretical approach is presented improving the knowledge on real time fast neutron dosimetry in intense fields. The detector is a reverse biased silicon junction operating at room temperature. The signal readout is a current measurement for which the leakage current of the sensor sets the detector threshold in the range of 1 Sv s−1 dose rates. The dosemeter energy response as a function of shielding, polyethylene neutron converters and diode characteristics has been computed to provide a tissue equivalent neutron monitor which is as insensitive as possible to the gamma photon background. Two Monte Carlo codes, one for the fast neutrons (SEMIC) and for the photon background (MCGET), are used to calculate the current response of the device irradiated by monoenergetic radiations (n or γ) as well as neutron sources.
Keywords :
Silicon diode , High fluence ,   , N , ? fields , dosimetry , simulations , real time
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1998
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2177908
Link To Document :
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