Author/Authors :
Casse، نويسنده , , G. and Dezillie، نويسنده , , B. and Glaser، نويسنده , , M. M. Grigoriev، نويسنده , , E. and Lemeilleur، نويسنده , , F. and Zankel، نويسنده , , K.، نويسنده ,
Abstract :
The radiation hardness of single-pad silicon detectors manufactured from non-standard silicon materials was studied up to proton fluences of 2–3×1014 cm−2. The results are presented in terms of reverse current, full depletion voltage and charge collection efficiency as a function of the proton fluence.
