Simulation and design of various configurations of silicon detectors for high irradiation tolerance up to 6×1014 n/cm2 in LHC application

Various new configurations (n+/p/p+, n+/n/p+ and p+/n/n+) of silicon detector designs have been simulated using processing and device simulation tools, before and after irradiation to various fluences. The aim of material selection and detector design is to ensure adequate charge collection after being irradiated up to 1015 n/cm2 (or 6×1014 π/cm2) in LHC environment, which corresponds to a net increase (with long-term anneal) of space charge of 7×1013 cm−3. Starting materials selected for simulations include high resistivity p-type silicon, medium and low resistivity n-type silicon. Design of multi-guard-rings structure for high-voltage operation is also considered. First, irradiation data of low resistivity silicon detector is presented.