Title of article :
Noise behaviour of DMILL JFETs
Author/Authors :
Manfredi، نويسنده , , P.F. and Mandelli، نويسنده , , E. and Re، نويسنده , , V. and Speziali، نويسنده , , V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Pages :
4
From page :
332
To page :
335
Abstract :
JFET parts and monolithic amplifiers employing JFETs as input elements have been realised and tested. They provided very useful information about the noise behaviour of junction field-effect transistors in DMILL technology. The DMILL JFETs are P-channel devices with 1.2 μm gate length. The specimens tested span a broad range of gate width values, from a few hundred μm to 100.000 μm, suitable to meet the matching requirements in several different applications, from spectrometry with small detectors to calorimetry applications in both room temperature or cryogenic conditions. The analysis of DMILL circuits employing a JFET as a low-noise input element concludes the paper.
Keywords :
Spectrometry , Preamplifier , JFET , Noise
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
1998
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2178092
Link To Document :
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