Title of article :
Reverse current in SI GaAs pixel detectors
Author/Authors :
Cola، نويسنده , , A، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Abstract :
A study of the carrier transport mechanism has been carried out on semi-insulating GaAs X-ray detectors. The aim is to analyze the excess current (larger than thermionic values), breakdown mechanisms and non-uniformities of the electric field in actual devices.
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
