Direct measurement of electron drift parameters of wide band gap semiconductors

This paper describes a novel technique developed for directly measuring the electron mean free drift time τe in wide band gap semiconductors. This method is based on a newly developed digital data analysis system, in conjunction with single polarity charge sensing, depth sensing and radial sensing techniques. Compared with conventional methods, the new technique does not involve curve fitting, allows the use of high-energy γ-rays, and is not sensitive to ballistic deficit nor the non-uniform electric field within semiconductors.