Author/Authors :
Valls، نويسنده , , J. and Atac، نويسنده , , M. and Mishina، نويسنده , , M. and Gubinelli، نويسنده , , M. and Tonet، نويسنده , , O. and Sorel، نويسنده , , M.، نويسنده ,
Abstract :
The rate capability of solid state photomultipliers has been studied for various combinations of temperature and bias voltage. Using a 635 nm laser diode flasher measurements were made up to a single photoelectron rate of 12MHz. Only a slight decrease, less than several per cent, of the quantum efficiency was observed at this rate whereas a 10% drop of the gain was observed.
