Title of article :
The double-gate p-JFET-inputted amplifier for low-capacitance detectors
Author/Authors :
Baturitsky، نويسنده , , M.A and Dvornikov، نويسنده , , O.V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1998
Abstract :
The low-noise monolithic double-gate p-JFET-inputted amplifier for detectors with capacitance up to 30 pF is described.
Keywords :
Monolithic , Noise , Charge sensitive amplifier , field effect transistor
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
