Author/Authors :
D’Alessandro، نويسنده , , R. and Albergo، نويسنده , , S. and Angarano، نويسنده , , M. and Azzi، نويسنده , , P. and Babucci، نويسنده , , E. and Bacchetta، نويسنده , , N. and Bagliesi، نويسنده , , G. and Bartalini، نويسنده , , P. and Basti، نويسنده , , A. and Biggeri، نويسنده , , U. and Bilei، نويسنده , , G.M and Bisello، نويسنده , , D. and Boemi، نويسنده , , D. and Bosi، نويسنده , , F. and Borrello، نويسنده , , L. and Bozzi، نويسنده , , C. and، نويسنده ,
Abstract :
The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors.
ncludes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature.
