Carrier lifetimes in heavily irradiated silicon diodes

Charge collection efficiencies for both minimum ionising and α-particle illumination have been measured for planar diodes which had been irradiated with fluences up to 3×1014 equivalent 1 MeV neutrons cm−2. These charge collection efficiencies have been fitted with a simple model and the carrier lifetimes extracted. The lifetimes are consistent with extrapolations of previous results at lower fluences. There is evidence of extra complication due to the heavy irradiation.