Author/Authors :
Albergo، نويسنده , , S and Azzi، نويسنده , , P and Babucci، نويسنده , , E and Bacchetta، نويسنده , , N and Bader، نويسنده , , A and Bagliesi، نويسنده , , G and Bartalini، نويسنده , , P and Basti، نويسنده , , A and Biggeri، نويسنده , , U and Bilei، نويسنده , , G.M and Bisello، نويسنده , , D and Boemi، نويسنده , , D and Bosi، نويسنده , , F and Borrello، نويسنده , , L and Bozzi، نويسنده , , C and Breuker، نويسنده , , H and Bruzzi، نويسنده , , M and Candelori، نويسنده ,
Abstract :
A large use of silicon microstrip detectors is foreseen for the intermediate part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological solutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, AC-coupled, polysilicon biased, 300 μm thick, p+ on n substrate detectors were chosen. Irradiation tests have been performed on prototypes up to fluence 2×1014 n/cm2. The detector performances do not significantly change if the detectors are biased well above the depletion voltage. S/N is reduced by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach high voltage operation (above 500 V).
