Title of article
First results on radiation damage studies using n+/p/p+ diodes fabricated with multi-guard ring structures
Author/Authors
Bolla، نويسنده , , G. and Bortoletto، نويسنده , , D. and Grim، نويسنده , , G.P. and Lander، نويسنده , , R.L. and Li، نويسنده , , Z. and Willard، نويسنده , , S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
7
From page
290
To page
296
Abstract
First measurements of silicon PIN diodes and multi-guard structures, fabricated from 10 kΩ cm p-type material in an n+/p/p+ configuration are presented. Studies of the effects of irradiation with 2.0×1014 p/cm2 at 63.3 MeV on the charge collection efficiency, leakage current, and breakdown are presented, along with studies of different guard ring configurations.
Keywords
PIN diodes , Irradiation , Multi-guard ring structures
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1999
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2180563
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