Title of article
Noise studies of n-strip on n-bulk silicon microstrip detectors using fast binary readout electronics after irradiation to 3×1014 p cm−2
Author/Authors
Robinson، نويسنده , , D. and Allport، نويسنده , , P.P. and Bizzell، نويسنده , , J. and Buttar، نويسنده , , C. and Carter، نويسنده , , A.A. and Carter، نويسنده , , J.R. and Goodrick، نويسنده , , M. and Greenall، نويسنده , , A. and Hill، نويسنده , , J.C. and Morgan، نويسنده , , D. and Munday، نويسنده , , D.J. and Ohsugi، نويسنده , , T. and Phillips، نويسنده , , P.W. and Riedler، نويسنده , , P. and Smith، نويسنده , , N.A. and Terada، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
28
To page
33
Abstract
N-strip on n-bulk silicon microstrip detectors were irradiated at the CERN PS to 3×1014 p cm-2 and their post-irradiation performance evaluated using fast binary readout electronics. Strip noise measurements demonstrate that detectors using conventional p-stop strip isolation are vulnerable to microdischarge at high bias voltages after irradiation. However, a novel isolation technique is shown to suppress microdischarge and lead to excellent post-irradiation characteristics.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1999
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2180932
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