Study of charge transport in non-irradiated and irradiated silicon detectors

The electrical characteristics of non-irradiated and irradiated n-type silicon detectors (p+–n–n+ diode) are extracted by fitting a charge transport model to a set of experimental data obtained from the measurement of the current pulse response induced by α and β particles in non-irradiated and irradiated silicon detectors. The detectors have been irradiated either with ≈1 MeV neutrons up to a fluence of 11.2×1013 n/cm2 or with 24 GeV/c protons up to a fluence of 10.6×1013 p/cm2. After n to p-type inversion, a small junction on the p+ side of the detector is introduced to fit the experimental data and therefore to account for the evolution of the electrical characteristics of the detectors with fluence.