Author/Authors :
T?b?caru، نويسنده , , G. and Borderie، نويسنده , , B. and Ouatizerga، نويسنده , , A. and Pârlog، نويسنده , , M. F. Rivet ، نويسنده , , M.F. and Auger، نويسنده , , G. and Bacri، نويسنده , , Ch.O. and Bocage، نويسنده , , F. and Bougault، نويسنده , , R. and Brou، نويسنده , , R. and Buchet، نويسنده , , Ph. and Charvet، نويسنده , , J.L. and Chbihi، نويسنده , , A. Crespo Colin، نويسنده , , J. and Cussol، نويسنده , , D. and Dayras، نويسنده , , R. and De، نويسنده ,
Abstract :
The pulse-height defect (PHD) of 36Ar, 58Ni, 129Xe, 181Ta and 197Au ions in the 180 passivated ion-implanted silicon detectors of the INDRA array has been measured. The detectors faced the target with the low electric field side. The charge encoding ensured a low ballistic deficit. Detectors with the same nominal characteristics and electric field strength show a PHD dependence on the individual silicon wafer. They are classified and calibrated by using an empirical parametrization which relates the PHD to the total energy through a Z-depending power law. A PHD analytical formula, based on a simple recombination model, is also proposed. It considers a realistic charge density variation with the position coordinate on the ion path. This new formula is successfully confronted to some experimental data.
