Title of article :
High-voltage performance of silicon detectors irradiated under bias
Author/Authors :
Bloch، نويسنده , , Ph. and Ciasnohova، نويسنده , , A. and Jading، نويسنده , , Y. and Peisert، نويسنده , , A. and Golutvin، نويسنده , , I. and Cheremukhin، نويسنده , , A. and Sergueev، نويسنده , , S. and Zamiatin، نويسنده , , N. and Dauphin، نويسنده , , G. and Safieh، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
344
To page :
348
Abstract :
The CMS preshower detector contains 16 m2 of silicon. The silicon sensors’ design is being finalized by taking into account their performance after five years of operation at high luminosity. Three detectors from different manufacturers were irradiated by neutrons and photons under bias and at low temperature. Their electrical parameters and their response to α and β particles were measured. The charge collection efficiency attains a plateau at around 300 V. The irradiation set-up and the results of the measurements are presented in this paper.
Keywords :
Preshower detector , High-energy particles , Silicon
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Serial Year :
2000
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Record number :
2184388
Link To Document :
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