Author/Authors :
Demaria، نويسنده , , N. and Albergo، نويسنده , , S. and Angarano، نويسنده , , M. and Azzi، نويسنده , , P. and Babucci، نويسنده , , E. and Bacchetta، نويسنده , , N. and Bader، نويسنده , , A. and Bagliesi، نويسنده , , G. and Basti، نويسنده , , A. and Biggeri، نويسنده , , U. and Bilei، نويسنده , , G.M and Bisello، نويسنده , , D. and Boemi، نويسنده , , D. and Bolla، نويسنده , , G. and Bosi، نويسنده , , F. and Borrello، نويسنده , , L. and Bortolet، نويسنده ,
Abstract :
Interstrip and backplane capacitances on silicon microstrip detectors with p+ strip on n substrate of 320 μm thickness were measured for pitches between 60 and 240 μm and width over pitch ratios between 0.13 and 0.5. Parametrisations of capacitance w.r.t. pitch and width were compared with data. The detectors were measured before and after being irradiated to a fluence of 4×1014 protons/cm2 of 24 GeV/c momentum. The effect of the crystal orientation of the silicon has been found to have a relevant influence on the surface radiation damage, favouring the choice of a 〈1 0 0〉 substrate. Working at high bias (up to 500 V in CMS) might be critical for the stability of detector, for a small width over pitch ratio. The influence of having a metal strip larger than the p+ implant has been studied and found to enhance the stability.
