Author/Authors :
Grim، نويسنده , , G.P and Bishai، نويسنده , , M and Gay، نويسنده , , C and Hill، نويسنده , , C and Nahn، نويسنده , , S and Pellett، نويسنده , , D.E and Pope، نويسنده , , G and Shepard، نويسنده , , P.F and Slaughter، نويسنده , , A.J and III، نويسنده , , W.C.Wester، نويسنده ,
Abstract :
The single event upset (SEU) cross section has been measured for 63 MeV protons incident on static memory cells in the CDF SVX3 pipelined silicon strip readout ASIC. The device was fabricated in the Honeywell 0.8 μm RICMOS IV bulk process, and contains a number of cells with minimum gate length transistors to control the mode of operation of the chip. Cross sections per cell of (4.4±1.8)×10−16 cm2, (2.1±0.7)×10−15 cm2, and (3.9±0.9)×10−15 cm2 were measured for angles of incidence of 0°, 45°, and 80°, respectively, for cells with 0.8 μm gate length. The SVX3 SEU rate in Run II at the Fermilab Tevatron was estimated to be sufficiently low that it would not affect the performance of the CDF Silicon Tracker.
