Title of article
A comparison of the performance of irradiated p-in-n and n-in-n silicon microstrip detectors read out with fast binary electronics
Author/Authors
Allport، نويسنده , , P.P and Andricek، نويسنده , , L and Buttar، نويسنده , , C.M and Carter، نويسنده , , J.R and Costa، نويسنده , , M.J and Drage، نويسنده , , L.M and Dubbs، نويسنده , , T and Goodrick، نويسنده , , M.J and Greenall، نويسنده , , A and Hill، نويسنده , , J.C and Jones، نويسنده , , T and Moorhead، نويسنده , , G and Morgan، نويسنده , , D and OʹShea، نويسنده , , V and Phillips، نويسنده , , P.W and Raine، نويسنده , , C and Riedler، نويسنده , , P ، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
10
From page
297
To page
306
Abstract
Both n-strip on n-bulk and p-strip on n-bulk silicon microstrip detectors have been irradiated at the CERN PS to a fluence of 3×1014 p cm−2 and their post-irradiation performance compared using fast binary readout electronics. Results are presented for test beam measurements of the efficiency and resolution as a function of bias voltage made at the CERN SPS, and for noise measurements giving detector strip quality. The detectors come from four different manufacturers and were made as prototypes for the SemiConductor Tracker of the ATLAS experiment at the CERN LHC.
Keywords
Irradiated , microstrip , Detectors , Silicon
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2000
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2187130
Link To Document