Author/Authors :
Stefanov، نويسنده , , K.D and Tsukamoto، نويسنده , , T and Miyamoto، نويسنده , , A and Sugimoto، نويسنده , , Y and Tamura، نويسنده , , N and Abe، نويسنده , , K and Nagamine، نويسنده , , T and Aso، نويسنده , , T، نويسنده ,
Abstract :
The radiation hardness of a two-phase CCD sensor has been studied. The devices were operated in Multi-Pinned Phase (MPP) mode for reduced dark current, and irradiated by electrons and neutrons. Spurious dark current was observed in the electron-irradiated CCDʹs and explained by impact ionization by holes, released from defect states near the Si–SiO2 interface. A model describing the charge transfer inefficiency (CTI) in a two-phase CCD as a function of temperature, background charges and clock timing has been developed and applied in a good agreement with the experimental data.
