Author/Authors :
Alam، نويسنده , , M.S and Ciocio، نويسنده , , A and Einsweiler، نويسنده , , K and Emes، نويسنده , , J and Gilchriese، نويسنده , , M and Joshi، نويسنده , , A and Kleinfelder، نويسنده , , S and Marchesini، نويسنده , , R and McCormack، نويسنده , , F and Milgrome، نويسنده , , O and Palaio، نويسنده , , N and Pengg، نويسنده , , F and Richardson، نويسنده , , J and Zizka، نويسنده , , G and Ackers، نويسنده , , M and Andreazza، نويسنده , , A and Comes، نويسنده ,
Abstract :
Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.
