Title of article
Indium dopant behaviour in CdTe single crystals
Author/Authors
Fochuk، نويسنده , , P. and Panchuk، نويسنده , , O. and Feychuk، نويسنده , , P. N. Shcherbak، نويسنده , , L. and Savitskyi، نويسنده , , A. and Parfenyuk، نويسنده , , O. and Ilashchuk، نويسنده , , M. and Hage-Ali، نويسنده , , M. and Siffert، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
9
From page
104
To page
112
Abstract
A brief review of different aspects of In atoms in the CdTe lattice behavior, necessary for scientific preparation of radiation-sensitive material is presented. Data concerning the CdTe–In T–x phase diagram, In segregation, diffusion and solubility as function of stoichiometric relations in CdTe and temperature are included. Low- and high-temperature electrical measurements results are discussed in the framework of compensation phenomena. A short review concerning the manufacture of In-doped CdTe crystals as well as their practical use is included.
Keywords
CdTe , In , diffusion , Electroconductivity , Point Defects , Associates
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2001
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2188842
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