Author/Authors :
Borrello، نويسنده , , L and DellʹOrso، نويسنده , , R and Dutta، نويسنده , , S and Gennai، نويسنده , , S and Mariani، نويسنده , , M and Messineo، نويسنده , , A and Segneri، نويسنده , , G and Starodumov، نويسنده , , A and Teodorescu، نويسنده , , L and Tonelli، نويسنده , , G and Verdini، نويسنده , , P.G، نويسنده ,
Abstract :
The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio (S/N) under different operating conditions.
