Author/Authors :
Nouais، نويسنده , , D. and Bondila، نويسنده , , M. and Bonvicini، نويسنده , , V. and Cerello، نويسنده , , P. and Crescio، نويسنده , , E. and Giubellino، نويسنده , , Marيa P. and Hernلndez-Montoya، نويسنده , , R. and Kolojvari، نويسنده , , A. and Montaٌo، نويسنده , , L.M. and Nilsen، نويسنده , , B.S. and Piemonte، نويسنده , , C. and Rashevsky، نويسنده , , A. and Tosello، نويسنده , , F. and Vacchi، نويسنده , , A. and Wheadon، نويسنده , , R، نويسنده ,
Abstract :
Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations.
Keywords :
Silicon detectors , Drift detectors , dopant concentration , Spatial resolution
