An integrating CMOS APS for X-ray imaging with an in-pixel preamplifier

We present in this paper an integrating CMOS Active Pixel Sensor (APS) circuit coated with scintillator type sensors for intra-oral dental X-ray imaging systems. The photosensing element in the pixel is formed by the p-diffusion on the n-well diode. The advantage of this photosensor is its very low direct absorption of X-rays compared to the other available photosensing elements in the CMOS pixel. The pixel features an integrating capacitor in the feedback loop of a preamplifier of a finite gain in order to increase the optical sensitivity. To verify the effectiveness of this in-pixel preamplification, a prototype 32×80 element CMOS active pixel array was implemented in a 0.8 μm CMOS double poly, n-well process with a pixel pitch of 50 μm. Measured results confirmed the improved optical sensitivity performance of the APS. Various measurements on device performance are presented.