Title of article :
X-ray film interferometer as an instrument for semiconductor heterostructure investigation
Author/Authors :
Vasilenko، نويسنده , , A.P. and Kolesnikov، نويسنده , , A.V and Nikitenko، نويسنده , , S.G. and Fedorov، نويسنده , , A.A. and Sokolov، نويسنده , , L.V. and Nikiforov، نويسنده , , A.I. and Trukhanov، نويسنده , , E.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
Translation Moiré pictures were first observed in interference topographs obtained using Synchrotron radiation. A film interferometer was prepared on the base of the GeSi heterosystem. Another film interferometer, which presents the heterosystem of epitaxial Si/ porous Si/ substrate Si, permitted us to observe a decrease in the bending of the film atomic planes at annealing of the heterosystem. This bend smoothing was calculated with the sensitivity better than 1 إ with the use of X-ray interference topographs. Contrast peculiarities in Moiré pictures are discussed for nondiffracting layers and crystal quantum wells.
Keywords :
Interferometer , Synchrotron radiation , Epitaxial heterosystem
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
Journal title :
Nuclear Instruments and Methods in Physics Research Section A
