Title of article
An introduction to deep submicron CMOS for vertex applications
Author/Authors
Campbell، نويسنده , , M and Anelli، نويسنده , , G and Cantatore، نويسنده , , E and Faccio، نويسنده , , F and Heijne، نويسنده , , E.H.M and Jarron، نويسنده , , P and Santiard، نويسنده , , J.-C and Snoeys، نويسنده , , W and Wyllie، نويسنده , , K، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
6
From page
140
To page
145
Abstract
Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.
Keywords
CMOS , Readout electronics , Vertex detectors
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2001
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2193107
Link To Document