• Title of article

    An introduction to deep submicron CMOS for vertex applications

  • Author/Authors

    Campbell، نويسنده , , M and Anelli، نويسنده , , G and Cantatore، نويسنده , , E and Faccio، نويسنده , , F and Heijne، نويسنده , , E.H.M and Jarron، نويسنده , , P and Santiard، نويسنده , , J.-C and Snoeys، نويسنده , , W and Wyllie، نويسنده , , K، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2001
  • Pages
    6
  • From page
    140
  • To page
    145
  • Abstract
    Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.
  • Keywords
    CMOS , Readout electronics , Vertex detectors
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Serial Year
    2001
  • Journal title
    Nuclear Instruments and Methods in Physics Research Section A
  • Record number

    2193107