Design and simulation studies of the silicon sensors for CMS

In this paper, the application of device simulation techniques to the design of silicon microstrip detectors devised for the CERN-CMS experiment is illustrated. Simulation strategies are summarized, focusing on radiation-related issues. Some practical examples are discussed, related to the optimization of detectors: low-resistivity substrates are analyzed, looking for improvement of long-term radiation hardness; overhanging metal contacts are studied, aiming at preventing occurrence of breakdown and early micro-discharges; thick-substrate detectors are investigated, in view of the exploitation of large-pitch devices in the outer layers of the tracker. Some emphasis is placed on the use of simulation as a physical interpretation aid, which supports detailed understanding of the device behavior.