Title of article
Impact of the layout on the electrical characteristics of double-sided silicon 3D sensors fabricated at FBK
Author/Authors
Povoli، نويسنده , , M. and Bagolini، نويسنده , , A. and Boscardin، نويسنده , , M. and Dalla Betta، نويسنده , , G.-F. and Giacomini، نويسنده , , G. and Mattedi، نويسنده , , F. and Vianello، نويسنده , , E. and Zorzi، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
5
From page
22
To page
26
Abstract
We report on experimental results and TCAD simulations addressing the impact of layout on the electrical characteristics of double-sided 3D diodes fabricated at Fondazione Bruno Kessler (FBK), Trento, Italy. Simulations are found to accurately reproduce the device characteristics, thus explaining the basic mechanisms governing the breakdown behavior and capacitance of different devices and providing useful hints for layout optimization.
Keywords
Silicon detectors , 3D detectors , TCAD , Electrical characterization , Test structures , Numerical simulations
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
2013
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
2193267
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